NCV451AMNWTBG

The NCV451 is a very low Ron MOSFET controlled by external logic pin, allowing optimization of battery life, and portable device autonomy. Indeed, due to a current consumption optimization with NMOS structure, leakage currents are eliminated by isolating connected IC on the battery when not used. Output discharge path is also embedded to eliminate residual voltages on the output rail. Proposed in a wide input voltage range from 0.75 V to 5.5 V, in a small DFNW6 2.2 x 2 mm, 0.65 pitch package. The NCV451 is a high side N channel MOSFET power distribution switch designed to isolate ICs connected on the battery in order to save energy. The part can be turned on, with a wide range of battery from 0.75 V to 5.5 V. Enable pin is an active high. The path is opened when EN pin is tied low (disable), forcing N−MOSFET switch off. The IN/OUT path is activated with a minimum of Vin of 0.75 V and EN forced to high level. N−MOSFET is placed between the output pin and GND, in order to discharge the application capacitor connected on OUT pin. The auto−discharge is activated when EN pin is set to low level (disable state). The discharge path (Pull down NMOS) stays activated as long as EN pin is set at low level and VIN > 0.75 V In order to limit the current across the internal discharge N−MOSFET, the typical value is set at RDIS. IN and OUT, 1 μF at least, capacitors must be placed as close as possible the part to for stability improvement.

Applications

• ADAS System
• Camera Module
• Power Management

Key features

• 0.75 V - 5.5 V Operating Range
• 21 mΩ N MOSFET from 3.6 V to 5.5 V
• 22 mΩ N MOSFET from 1 V to 3.3 V
• DC Current Up to 3 A
• Output Auto−Discharge
• Active High EN Pin
• DFNW6 2.2 x 2 mm, 0.65 pitch
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant