MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
From
₹2.32
25,99,250 in stock
onsemiDatasheet (PDF)
NTMFS0D9N04XLT1G
N-Channel 40V 278A 136W Surface Mount SO-8FL
SO-8FLROHS3 CompliantActive
MOSFET N-CH 40V 278A SO-8FL
- Manufacturer
- onsemi
- Manufacturer part #
- NTMFS0D9N04XLT1G
- Store part #
- C25988881
- Package / case
- SO-8FL
- Category
- Single FETs, MOSFETs
- Packaging
- Bag-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
10 in stock
#C25988881
Stock & price checked 46 h ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹632.57 | ₹632.57 |
| 10+ | ₹624.61 | ₹6,246.10 |
| 30+ | ₹619.46 | ₹18,583.80 |
| 100+ | ₹614.30 | ₹61,430.00 |
1 × ₹632.57
₹632.57
excl. GST
₹746.43 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 1,500 per bag
NTMFS0D9N04XLT1G
₹632.57 for 1 + GST
Specifications
- Operating Temperature
- -55℃~+175℃
- Drain to Source Voltage
- 40V
- Current - Continuous Drain(Id)
- 278A
- Output Capacitance(Coss)
- 1.35nF
- Ciss-Input Capacitance
- 5.16nF
- Pd - Power Dissipation
- 136W
- Reverse Transfer Capacitance (Crss)
- 23pF
- RDS(on)
- 1.5mΩ@4.5V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 70nC@10V
- Gate Threshold Voltage (Vgs(th))
- 2.2V
- Type
- N-Channel
Packaging & compliance
- RoHS
- ROHS3 Compliant
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Bag-packed
- Standard pack
- 1,500 / Bag
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.66 g
Overview
Applications
- High switching frequency DC-DC conversion
- Synchronous rectification
Key features
- Low on-resistance RDS(on) to minimize conduction losses
- Low reverse recovery charge QRR with soft recovery characteristics to minimize reverse recovery energy loss ERR and voltage spikes
- Low gate charge QG and capacitance to minimize driving and switching losses
- These devices are lead-free, halogen-free/bromine-free flame retardant, and RoHS compliant
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Similar parts — check the datasheet before substituting.
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