MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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onsemiDatasheet (PDF)
NTTFS010N10MCLTAG
52W 100V 50A 10.6mΩ@10V 1 N-channel N-Channel WDFN-5(3.3x3.3) Single FETs, MOSFETs RoHS
WDFN-5(3.3x3.3)ROHS3 CompliantActive
MOSFET N-CH 100V 50A WDFN-5(3.3x3.3)
- Manufacturer
- onsemi
- Manufacturer part #
- NTTFS010N10MCLTAG
- Store part #
- C604494
- Package / case
- WDFN-5(3.3x3.3)
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
153 in stock
#C604494
Stock & price checked 6 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹431.48 | ₹431.48 |
| 10+ | ₹365.65 | ₹3,656.50 |
| 30+ | ₹326.54 | ₹9,796.20 |
| 100+ | ₹287.00 | ₹28,700.00 |
| 500+ | ₹268.75 | ₹1,34,375.00 |
| 1,500+ | ₹260.50 | ₹3,90,750.00 |
1 × ₹431.48
₹431.48
excl. GST
₹509.15 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 1,500 per reel
NTTFS010N10MCLTAG
₹431.48 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 625pF
- Ciss-Input Capacitance
- 2.15nF
- Pd - Power Dissipation
- 52W
- Operating Temperature
- -55℃~+150℃
- Drain to Source Voltage
- 100V
- Current - Continuous Drain(Id)
- 50A
- Reverse Transfer Capacitance (Crss)
- 18pF
- RDS(on)
- 10.6mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 30nC@10V
- Vgs
- ±20V
- Gate Threshold Voltage (Vgs(th))
- 3V
- Type
- N-Channel
Packaging & compliance
- RoHS
- ROHS3 Compliant
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tape & Reel (TR)
- Standard pack
- 1,500 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 1.079 g
Overview
This N-channel POWERTRENCH MOSFET is manufactured using an advanced POWERTRENCH process with integrated shield gate technology. The process is optimized to minimize on-resistance while maintaining excellent switching performance and a best-in-class soft body diode.
Applications
- Primary DC-DC MOSFET
- Synchronous rectifier in DC-DC and AC-DC
- Motor drive
Key features
- Shielded gate MOSFET technology
- Max rDS(on) = 10.6 mΩ at VGS = 10 V, ID = 15 A
- Max rDS(on) = 15.9 mΩ at VGS = 4.5 V, ID = 12 A
- Qrr 50% lower than other MOSFET suppliers
- Reduced switching noise/EMI
- MSL1 robust package design
- 100% UIL tested
- RoHS compliant
Alternatives
Similar parts — check the datasheet before substituting.
| Part | Manufacturer | Package | Stock | Price from (excl. GST) | Action | |
|---|---|---|---|---|---|---|
 | HSBB0066#C54842096HUASHUO · PRPAK-8(3x3) | HUASHUO | PRPAK-8(3x3) | 25 | ₹59.52 · 25 in stock | View |
| NVTFWS010N10MCLTAG#C900553onsemi · WDFN-5(3.3x3.3) | onsemi | WDFN-5(3.3x3.3) | On request | ₹121.82 · 0 in stock | View | |
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