MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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onsemiDatasheet (PDF)
NVH4L022N120M3S
N-Channel 1.2kV 68A 352W Through Hole TO-247-4L
TO-247-4LROHS3 CompliantActive
Sillicon Carbide (SiC) MOSFET
- Manufacturer
- onsemi
- Manufacturer part #
- NVH4L022N120M3S
- Store part #
- C3290753
- Package / case
- TO-247-4L
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
1 in stock
#C3290753
Stock & price checked 2 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹7,681.30 | ₹7,681.30 |
| 10+ | ₹7,449.68 | ₹74,496.80 |
1 × ₹7,681.30
₹7,681.30
excl. GST
₹9,063.93 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 30 per tube
NVH4L022N120M3S
₹7,681.30 for 1 + GST
Specifications
- Operating Temperature
- -55℃~+175℃
- Drain to Source Voltage
- 1.2kV
- Output Capacitance(Coss)
- 146pF
- Current - Continuous Drain(Id)
- 68A
- Ciss-Input Capacitance
- 3.175nF
- Pd - Power Dissipation
- 352W
- Reverse Transfer Capacitance (Crss)
- 12pF
- RDS(on)
- 30mΩ
- Number
- 1 N-channel
- Gate Charge(Qg)
- 151nC
- Gate Threshold Voltage (Vgs(th))
- 4.4V
- Type
- N-Channel
Packaging & compliance
- RoHS
- ROHS3 Compliant
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tube-packed
- Standard pack
- 30 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 10 g
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