MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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onsemiDatasheet (PDF)
NVMJST2D6N08HTXG
116W 80V 131.5A 2.8mΩ@10V 1 N-channel N-Channel LFPAK-10(7.5x5) Single FETs, MOSFETs RoHS
LFPAK-10(7.5x5)ROHS3 CompliantActive
MOSFET N-CH 80V 131.5A LFPAK-10(7.5x5)
- Manufacturer
- onsemi
- Manufacturer part #
- NVMJST2D6N08HTXG
- Store part #
- C5208907
- Package / case
- LFPAK-10(7.5x5)
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
21 in stock
#C5208907
Stock & price checked 5 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹585.40 | ₹585.40 |
| 10+ | ₹570.87 | ₹5,708.70 |
| 30+ | ₹561.34 | ₹16,840.20 |
| 100+ | ₹551.59 | ₹55,159.00 |
1 × ₹585.40
₹585.40
excl. GST
₹690.77 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 3,000 per reel
NVMJST2D6N08HTXG
₹585.40 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 645pF
- Ciss-Input Capacitance
- 4.405nF
- Pd - Power Dissipation
- 116W
- Operating Temperature
- -55℃~+175℃
- Drain to Source Voltage
- 80V
- Current - Continuous Drain(Id)
- 131.5A
- Reverse Transfer Capacitance (Crss)
- 25pF
- RDS(on)
- 2.8mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 68nC@10V
- Vgs
- ±20V
- Gate Threshold Voltage (Vgs(th))
- 2V
- Type
- N-Channel
Packaging & compliance
- RoHS
- ROHS3 Compliant
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tape & Reel (TR)
- Standard pack
- 3,000 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.438 g
Overview
Key features
- Compact 5x7 mm footprint for space-constrained designs
- Low on-resistance RDS(on) for minimized conduction losses
- Low gate charge QG and capacitance for minimized switching losses
- TCPAK57 top-side cooling package (TCPAK10)
- AEC-Q101 qualified, PPAP documentation available
- Lead-free, RoHS compliant
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