MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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HXY MOSFETDatasheet (PDF)
NVTFS5C658NLWFTAG-HXY
73.5W 60V 100A 4mΩ@10V 1 N-channel N-Channel DFN-8L(3x3) Single FETs, MOSFETs
DFN-8L(3x3)RoHSActive
- Manufacturer
- HXY MOSFET
- Manufacturer part #
- NVTFS5C658NLWFTAG-HXY
- Store part #
- C51949318
- Package / case
- DFN-8L(3x3)
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
117 in stock
#C51949318
Stock & price checked 3 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹176.12 | ₹176.12 |
| 10+ | ₹148.19 | ₹1,481.90 |
| 30+ | ₹132.95 | ₹3,988.50 |
| 100+ | ₹115.55 | ₹11,555.00 |
| 500+ | ₹108.04 | ₹54,020.00 |
| 1,000+ | ₹104.38 | ₹1,04,380.00 |
1 × ₹176.12
₹176.12
excl. GST
₹207.82 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 5,000 per reel
NVTFS5C658NLWFTAG-HXY
₹176.12 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 735pF
- Ciss-Input Capacitance
- 2.18nF
- Pd - Power Dissipation
- 73.5W
- Drain to Source Voltage
- 60V
- Configuration
- Standalone
- Operating Temperature
- -55℃~+150℃
- Current - Continuous Drain(Id)
- 100A
- Reverse Transfer Capacitance (Crss)
- 42pF
- RDS(on)
- 4mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 35nC@10V
- Vgs
- ±20V
- Gate Threshold Voltage (Vgs(th))
- 1.7V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- Moisture sensitivity
- MSL 3 (168 hours)
- Packaging
- Tape & Reel (TR)
- Standard pack
- 5,000 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.071 g
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