Varnitronics
P2504BDG-VB VBsemi Elec
VBsemi Elec

P2504BDG-VB

40V 55A 3.75W 12mΩ@10V 1 N-channel TO-252 Single FETs, MOSFETs

TO-252RoHSActive

MOSFET N-CH 40V 55A TO-252

Manufacturer
VBsemi Elec
Manufacturer part #
P2504BDG-VB
Store part #
C5240532
Package / case
TO-252
Packaging
Tape & Reel (TR)
Datasheet (PDF)

Every Order Guarantee

100% Authentic · 30-Day Return or Replacement · policy

10 in stock

#C5240532

Stock & price checked 32 h ago

QuantityUnit pricePack price
1+₹71.35₹71.35
10+₹56.96₹569.60
30+₹50.72₹1,521.60
100+₹42.98₹4,298.00
500+₹37.82₹18,910.00
1,000+₹35.89₹35,890.00

1 × ₹71.35

₹71.35

excl. GST

₹84.19 incl. 18% GST

Need volume or a scheduled delivery? Request a quote
  • Dispatch in 15-18 working days
  • GST invoice with every order
  • Standard pack: 2,500 per reel

P2504BDG-VB

₹71.35 for 1 + GST

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Specifications

Operating Temperature
-55℃~+175℃
Drain to Source Voltage
40V
Current - Continuous Drain(Id)
55A
Ciss-Input Capacitance
1.801nF
Pd - Power Dissipation
3.75W
Reverse Transfer Capacitance (Crss)
570pF
RDS(on)
12mΩ@10V
Number
1 N-channel
Gate Charge(Qg)
42nC@10V
Gate Threshold Voltage (Vgs(th))
1.5V

Packaging & compliance

RoHS
RoHS
Lifecycle
Active
ECCN
EAR99
Packaging
Tape & Reel (TR)
Standard pack
2,500 / Reel
Sold per
Piece
Minimum order
1
Unit weight
0.4 g

Overview

These are enhancement-mode P-channel MOSFETs fabricated using P-channel DMOS technology, designed for high-speed pulse amplifier and driver applications. These MOSFETs feature low on-resistance rDS(on) and low threshold voltage.

Applications

  • OR gate
  • Server
  • DC/DC

Key features

  • Trench power MOSFET
  • 100% Rq and UIS tested
  • RoHS compliant per EU Directive 2011/65/EU

Alternatives

Similar parts — check the datasheet before substituting.

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FDD8451-VB#C7463502VBsemi Elec · TO-252₹71.01 · 105 in stockView
AP9965GEH-VB#C2680891VBsemi Elec · TO-252₹67.22 · 50 in stockView
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