MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
From
₹2.32
26,12,850 in stock
VBsemi ElecDatasheet (PDF)
P2610BT-VB
N-Channel 100V 70A 3.35W Through Hole TO-220AB
TO-220ABRoHSActive
MOSFET N-CH 100V 70A TO-220AB
- Manufacturer
- VBsemi Elec
- Manufacturer part #
- P2610BT-VB
- Store part #
- C2680759
- Package / case
- TO-220AB
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
56 in stock
#C2680759
Stock & price checked 9 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹122.17 | ₹122.17 |
| 10+ | ₹99.21 | ₹992.10 |
| 50+ | ₹79.64 | ₹3,982.00 |
| 100+ | ₹68.47 | ₹6,847.00 |
| 500+ | ₹61.68 | ₹30,840.00 |
| 1,000+ | ₹58.09 | ₹58,090.00 |
| 2,000+ | ₹57.29 | ₹1,14,580.00 |
| 4,000+ | ₹56.89 | ₹2,27,560.00 |
1 × ₹122.17
₹122.17
excl. GST
₹144.16 incl. 18% GST
- Dispatch in 7–10 working days
- GST invoice with every order
- Standard pack: 50 per tube
P2610BT-VB
₹122.17 for 1 + GST
Specifications
- Operating Temperature
- -55℃~+175℃
- Drain to Source Voltage
- 100V
- Output Capacitance(Coss)
- 210pF
- Current - Continuous Drain(Id)
- 70A
- Ciss-Input Capacitance
- 1.8nF
- Pd - Power Dissipation
- 3.35W
- Reverse Transfer Capacitance (Crss)
- 110pF
- RDS(on)
- 17mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 90nC@10V
- Gate Threshold Voltage (Vgs(th))
- 4V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- Moisture sensitivity
- MSL 1 (unlimited)
- ECCN
- EAR99
- Packaging
- Tube-packed
- Standard pack
- 50 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 2.05 g
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