MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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VBsemi ElecDatasheet (PDF)
PSMN3R3-80BS,118-VB
375W 80V 215A 5mΩ@10V 1 N-channel N-Channel TO-263 Single FETs, MOSFETs
TO-263RoHSActive
- Manufacturer
- VBsemi Elec
- Manufacturer part #
- PSMN3R3-80BS,118-VB
- Store part #
- C52191040
- Package / case
- TO-263
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
5 in stock
#C52191040
Stock & price checked 9 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹198.49 | ₹198.49 |
| 10+ | ₹167.70 | ₹1,677.00 |
| 50+ | ₹150.70 | ₹7,535.00 |
| 100+ | ₹131.55 | ₹13,155.00 |
| 500+ | ₹123.14 | ₹61,570.00 |
| 1,000+ | ₹119.27 | ₹1,19,270.00 |
1 × ₹198.49
₹198.49
excl. GST
₹234.22 incl. 18% GST
- Dispatch in 7–10 working days
- GST invoice with every order
- Standard pack: 50 per tube
PSMN3R3-80BS,118-VB
₹198.49 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 3.25nF
- Ciss-Input Capacitance
- 7.91nF
- Pd - Power Dissipation
- 375W
- Operating Temperature
- -55℃~+175℃
- Drain to Source Voltage
- 80V
- Current - Continuous Drain(Id)
- 215A
- Reverse Transfer Capacitance (Crss)
- 348pF
- RDS(on)
- 5mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 94nC
- Vgs
- ±20V
- Gate Threshold Voltage (Vgs(th))
- 2V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- Moisture sensitivity
- MSL 3 (168 hours)
- Packaging
- Tube-packed
- Standard pack
- 50 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 2.6 g
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