MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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VBsemi ElecDatasheet (PDF)
PSMN5R6-100XS-VB
84W 100V 120A 3.8mΩ@10V 1 N-channel N-Channel TO-220F Single FETs, MOSFETs
TO-220FRoHSActive
- Manufacturer
- VBsemi Elec
- Manufacturer part #
- PSMN5R6-100XS-VB
- Store part #
- C52148734
- Package / case
- TO-220F
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
10 in stock
#C52148734
Stock & price checked 34 h ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹230.76 | ₹230.76 |
| 10+ | ₹197.02 | ₹1,970.20 |
| 50+ | ₹175.91 | ₹8,795.50 |
| 100+ | ₹154.35 | ₹15,435.00 |
| 500+ | ₹144.55 | ₹72,275.00 |
| 1,000+ | ₹140.20 | ₹1,40,200.00 |
1 × ₹230.76
₹230.76
excl. GST
₹272.30 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 50 per tube
PSMN5R6-100XS-VB
₹230.76 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 3.07nF
- Ciss-Input Capacitance
- 5.78nF
- Pd - Power Dissipation
- 84W
- Operating Temperature
- -55℃~+175℃
- Drain to Source Voltage
- 100V
- Current - Continuous Drain(Id)
- 120A
- Reverse Transfer Capacitance (Crss)
- 305pF
- RDS(on)
- 3.8mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 125nC
- Vgs
- ±20V
- Gate Threshold Voltage (Vgs(th))
- 3V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- Packaging
- Tube-packed
- Standard pack
- 50 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 2.57 g
Overview
Key features
- Trench power MOSFET
- Low thermal resistance package
- 100% gate resistance (Rg) and unclamped inductive switching (UIS) tested
- RoHS compliant
- Halogen-free
Alternatives
Similar parts — check the datasheet before substituting.
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