RF4L055GNTCR

ALD114813/ALD114913 are high-precision monolithic quad/dual depletion-mode N-channel MOSFETs, factory-matched using ALD's proven EPAD CMOS technology. These devices are suited for low-voltage, small-signal applications. They are ideal functional replacements for normally-closed relay applications, as they are in a normally-open (conducting) state when no power is applied, yet can be turned off or modulated when system power is on. These MOSFETs exhibit a unique characteristic of operating in resistive mode at low drain voltage levels and in current source mode at higher voltage levels when the gate is grounded, providing a constant drain current. These MOSFETs are designed for superior device electrical characteristic matching. Since the devices reside on the same monolithic die, they also offer excellent temperature tracking characteristics. As design components, they are applicable across a wide range of analog applications and serve as fundamental building blocks for current sources, differential amplifier input stages, transmission gates, and multiplexer applications. Beyond the matched electrical characteristics of the pair, each individual MOSFET also features well-controlled parameters, allowing users to rely on tight design constraints. Even devices from different lots and production dates exhibit correspondingly well-matched characteristics. These depletion-mode devices are designed for minimum offset voltage and differential thermal response, suitable for switching and amplification applications in single 1.5V to ±5V systems requiring low input bias current, low input capacitance, and fast switching speed. These devices feature well-controlled turn-off and subthreshold characteristics, making them suitable for designs that depend on subthreshold behavior. ALD114813/ALD114913 are suited for precision applications requiring very high current gain (β), such as current mirrors and current sources. At 25°C, with a drain current of 3mA and an input leakage current of 30pA, an example DC current gain calculation yields 3mA / 30pA = 100,000,000. For most applications, connect the V+ pin to the most positive voltage in the system, and connect the V- and IC pins to the most negative voltage in the system. The voltage on all other pins must remain within these voltage limits at all times.

Applications

• Switching applications

Key features

• Low on-resistance
• High power, compact package
• Lead-free lead finish; RoHS compliant
• Halogen-free