MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
From
₹2.32
26,12,850 in stock
HXY MOSFETDatasheet (PDF)
RQ3E100BNTB1-HXY
37.5W 30V 35A 7.5mΩ@10V 1 N-channel N-Channel DFN-8L(3x3) Single FETs, MOSFETs
DFN-8L(3x3)RoHSActive
- Manufacturer
- HXY MOSFET
- Manufacturer part #
- RQ3E100BNTB1-HXY
- Store part #
- C53263015
- Package / case
- DFN-8L(3x3)
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
5 in stock
#C53263015
Stock & price checked 8 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹66.77 | ₹66.77 |
| 10+ | ₹54.89 | ₹548.90 |
| 30+ | ₹49.71 | ₹1,491.30 |
| 100+ | ₹43.43 | ₹4,343.00 |
| 500+ | ₹36.30 | ₹18,150.00 |
| 1,000+ | ₹34.58 | ₹34,580.00 |
1 × ₹66.77
₹66.77
excl. GST
₹78.79 incl. 18% GST
- Dispatch in 7–10 working days
- GST invoice with every order
- Standard pack: 5,000 per reel
RQ3E100BNTB1-HXY
₹66.77 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 131pF
- Ciss-Input Capacitance
- 940pF
- Pd - Power Dissipation
- 37.5W
- Operating Temperature
- -55℃~+175℃
- Configuration
- Standalone
- Drain to Source Voltage
- 30V
- Current - Continuous Drain(Id)
- 35A
- Reverse Transfer Capacitance (Crss)
- 109pF
- RDS(on)
- 7.5mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 9.8nC@4.5V
- Vgs
- ±20V
- Gate Threshold Voltage (Vgs(th))
- 2.5V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- Moisture sensitivity
- MSL 3 (168 hours)
- Packaging
- Tape & Reel (TR)
- Standard pack
- 5,000 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.07 g
Same category
