Hangzhou Silan MicroelectronicsDatasheet (PDF)
SGT50T65FD1PN
235W 100A 650V FS (Field Stop) TO-3P-3 Single IGBTs
PopularTO-3P-3RoHSActive
- Manufacturer
- Hangzhou Silan Microelectronics
- Manufacturer part #
- SGT50T65FD1PN
- Store part #
- C2761787
- Package / case
- TO-3P-3
- Category
- Single IGBTs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
14,966 in stock
#C2761787
Stock & price checked 6 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹176.06 | ₹176.06 |
| 10+ | ₹148.72 | ₹1,487.20 |
| 30+ | ₹119.40 | ₹3,582.00 |
| 90+ | ₹102.47 | ₹9,222.30 |
| 510+ | ₹95.10 | ₹48,501.00 |
| 1,200+ | ₹91.62 | ₹1,09,944.00 |
1 × ₹176.06
₹176.06
excl. GST
₹207.75 incl. 18% GST
- Dispatch in 7–10 working days
- GST invoice with every order
- Standard pack: 30 per tube
SGT50T65FD1PN
₹176.06 for 1 + GST
Specifications
- Pd - Power Dissipation
- 235W
- Td(off)
- 130ns
- Td(on)
- 45ns
- Current - Collector(Ic)
- 100A
- Collector-Emitter Breakdown Voltage (Vces)
- 650V
- Reverse Transfer Capacitance (Cres)
- 42pF
- IGBT Type
- FS (Field Stop)
- Gate-Emitter Threshold Voltage (Vge(th)@Ic)
- 5V
- Operating Temperature
- -55℃~+150℃
- Vce Saturation(VCE(sat))
- 2V@50A,15V
- Reverse Recovery Time(trr)
- 33ns
- Switching Energy(Eoff)
- 3.8mJ
- Turn-On Energy (Eon)
- 1mJ
- Input Capacitance(Cies)
- 4.5nF
- Output Capacitance(Coes)
- 100pF
- Gate Charge(Qg)
- 46nC@15V
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- Packaging
- Tube-packed
- Standard pack
- 30 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 7.228 g
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