Hangzhou Silan MicroelectronicsDatasheet (PDF)
SGT50T65SDM1P7
416W 100A 650V FS (Field Stop) TO-247-3L Single IGBTs
TO-247-3LRoHSActive
- Manufacturer
- Hangzhou Silan Microelectronics
- Manufacturer part #
- SGT50T65SDM1P7
- Store part #
- C53327203
- Package / case
- TO-247-3L
- Category
- Single IGBTs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
38 in stock
#C53327203
Stock & price checked 8 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹290.60 | ₹290.60 |
| 10+ | ₹254.93 | ₹2,549.30 |
| 30+ | ₹232.78 | ₹6,983.40 |
| 100+ | ₹209.79 | ₹20,979.00 |
| 600+ | ₹199.47 | ₹1,19,682.00 |
| 1,200+ | ₹195.17 | ₹2,34,204.00 |
1 × ₹290.60
₹290.60
excl. GST
₹342.91 incl. 18% GST
- Dispatch in 7–10 working days
- GST invoice with every order
- Standard pack: 600 per reel
SGT50T65SDM1P7
₹290.60 for 1 + GST
Specifications
- Td(off)
- 125ns
- Pd - Power Dissipation
- 416W
- Td(on)
- 37ns
- Current - Collector(Ic)
- 100A
- Collector-Emitter Breakdown Voltage (Vces)
- 650V
- Reverse Transfer Capacitance (Cres)
- 55pF
- IGBT Type
- FS (Field Stop)
- Gate-Emitter Threshold Voltage (Vge(th)@Ic)
- 5V
- Operating Temperature
- -55℃~+175℃
- Vce Saturation(VCE(sat))
- 1.65V
- Reverse Recovery Time(trr)
- 37.5ns
- Collector Cut-Off Current (Ices)
- 200uA
- Switching Energy(Eoff)
- 1.1mJ
- Turn-On Energy (Eon)
- 3mJ
- Input Capacitance(Cies)
- 2.723nF
- Gate Charge(Qg)
- 123nC@15V
- Output Capacitance(Coes)
- 230pF
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tape & Reel (TR)
- Standard pack
- 600 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 11.831 g
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