Varnitronics
SI4894BDY-T1-E3 VISHAY
VISHAY

SI4894BDY-T1-E3

30V 8.9A 1.4W 11mΩ@10V 1 N-channel SOIC-8 Single FETs, MOSFETs RoHS

SOIC-8ROHS3 CompliantActive
Manufacturer
VISHAY
Manufacturer part #
SI4894BDY-T1-E3
Store part #
C3279930
Package / case
SOIC-8
Packaging
Tape & Reel (TR)
Datasheet (PDF)

Every Order Guarantee

100% Authentic · 30-Day Return or Replacement · policy

15 in stock

#C3279930

Stock & price checked 7 days ago

QuantityUnit pricePack price
1+₹423.00₹423.00
10+₹416.98₹4,169.80
30+₹412.68₹12,380.40
100+₹408.61₹40,861.00

1 × ₹423.00

₹423.00

excl. GST

₹499.14 incl. 18% GST

Need volume or a scheduled delivery? Request a quote
  • Dispatch in 15-18 working days
  • GST invoice with every order
  • Standard pack: 2,500 per reel

SI4894BDY-T1-E3

₹423.00 for 1 + GST

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Specifications

Drain to Source Voltage
30V
Operating Temperature
-55℃~+150℃
Current - Continuous Drain(Id)
8.9A
Ciss-Input Capacitance
1.58nF
Pd - Power Dissipation
1.4W
RDS(on)
11mΩ@10V
Number
1 N-channel
Gate Charge(Qg)
38nC@10V
Gate Threshold Voltage (Vgs(th))
3V

Packaging & compliance

RoHS
ROHS3 Compliant
Lifecycle
Active
ECCN
EAR99
Packaging
Tape & Reel (TR)
Standard pack
2,500 / Reel
Sold per
Piece
Minimum order
1
Unit weight
0.413 g

Overview

These N-channel enhancement-mode power MOSFETs are manufactured using a proprietary high cell density DMOS technology. This ultra-high density process is specifically designed to minimize on-resistance and deliver superior switching performance. These devices are particularly suited for low-voltage applications such as DC/DC conversion, disk drive motor control, and other battery-powered circuits requiring fast switching, low in-line power dissipation, and ruggedness against transients.

Applications

  • DC/DC conversion - Disk drive motor control - Other battery-powered circuits

Key features

  • Halogen-free product compliant with IEC 61249-2-21
  • TrenchFET power MOSFET
  • 100% gate resistance (Rg) tested

Alternatives

Similar parts — check the datasheet before substituting.

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