MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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HXY MOSFETDatasheet (PDF)
SI7635DP-T1-GE3-HXY
P-Channel 18V 80A 41.67W Surface Mount DFN5x6-8L
DFN5x6-8LRoHSActive
MOSFET P-CH 18V 80A DFN5x6-8L
- Manufacturer
- HXY MOSFET
- Manufacturer part #
- SI7635DP-T1-GE3-HXY
- Store part #
- C22366938
- Package / case
- DFN5x6-8L
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
11 in stock
#C22366938
Stock & price checked 8 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹148.00 | ₹148.00 |
| 10+ | ₹120.56 | ₹1,205.60 |
| 30+ | ₹106.96 | ₹3,208.80 |
| 100+ | ₹93.35 | ₹9,335.00 |
| 500+ | ₹85.35 | ₹42,675.00 |
| 1,000+ | ₹81.03 | ₹81,030.00 |
1 × ₹148.00
₹148.00
excl. GST
₹174.64 incl. 18% GST
- Dispatch in 7–10 working days
- GST invoice with every order
- Standard pack: 5,000 per reel
SI7635DP-T1-GE3-HXY
₹148.00 for 1 + GST
Specifications
- Configuration
- Standalone
- Operating Temperature
- -55℃~+150℃
- Drain to Source Voltage
- 18V
- Output Capacitance(Coss)
- 1.67nF
- Current - Continuous Drain(Id)
- 80A
- Ciss-Input Capacitance
- 12nF
- Pd - Power Dissipation
- 41.67W
- Reverse Transfer Capacitance (Crss)
- 730pF
- RDS(on)
- 2.5mΩ@4.5V
- Number
- 1 P-Channel
- Gate Charge(Qg)
- 149nC@4.5V
- Gate Threshold Voltage (Vgs(th))
- 600mV
- Type
- P-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- Moisture sensitivity
- MSL 3 (168 hours)
- Packaging
- Tape & Reel (TR)
- Standard pack
- 5,000 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.13 g
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