MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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HXY MOSFETDatasheet (PDF)
SI7860DP-T1-GE3-HXY
31W 30V 60A 6.5mΩ@10V 1 N-channel N-Channel DFN-8L(5x6) Single FETs, MOSFETs
DFN-8L(5x6)RoHSActive
- Manufacturer
- HXY MOSFET
- Manufacturer part #
- SI7860DP-T1-GE3-HXY
- Store part #
- C53263333
- Package / case
- DFN-8L(5x6)
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
198 in stock
#C53263333
Stock & price checked 3 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹66.37 | ₹66.37 |
| 10+ | ₹53.26 | ₹532.60 |
| 30+ | ₹47.68 | ₹1,430.40 |
| 100+ | ₹40.60 | ₹4,060.00 |
| 500+ | ₹37.37 | ₹18,685.00 |
| 1,000+ | ₹35.44 | ₹35,440.00 |
1 × ₹66.37
₹66.37
excl. GST
₹78.32 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 5,000 per reel
SI7860DP-T1-GE3-HXY
₹66.37 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 163pF
- Ciss-Input Capacitance
- 1.317nF
- Pd - Power Dissipation
- 31W
- Operating Temperature
- -55℃~+150℃
- Configuration
- Standalone
- Drain to Source Voltage
- 30V
- Current - Continuous Drain(Id)
- 60A
- Reverse Transfer Capacitance (Crss)
- 131pF
- RDS(on)
- 6.5mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 17.6nC
- Vgs
- ±20V
- Gate Threshold Voltage (Vgs(th))
- 1.5V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- Moisture sensitivity
- MSL 3 (168 hours)
- Packaging
- Tape & Reel (TR)
- Standard pack
- 5,000 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.139 g
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