MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
From
₹1.93
26,12,850 in stock
VBsemi ElecDatasheet (PDF)
SI7860DP-T1-GE3-VB
N-Channel 30V 80A 155W Surface Mount DFN5x6-8
DFN5x6-8RoHSActive
MOSFET N-CH 30V 80A DFN5x6-8
- Manufacturer
- VBsemi Elec
- Manufacturer part #
- SI7860DP-T1-GE3-VB
- Store part #
- C20417684
- Package / case
- DFN5x6-8
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
34 in stock
#C20417684
Stock & price checked 7 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹92.54 | ₹92.54 |
| 10+ | ₹78.76 | ₹787.60 |
| 30+ | ₹71.96 | ₹2,158.80 |
| 100+ | ₹65.15 | ₹6,515.00 |
| 500+ | ₹52.45 | ₹26,225.00 |
| 1,000+ | ₹50.48 | ₹50,480.00 |
1 × ₹92.54
₹92.54
excl. GST
₹109.20 incl. 18% GST
- Dispatch in 7–10 working days
- GST invoice with every order
- Standard pack: 5,000 per reel
SI7860DP-T1-GE3-VB
₹92.54 for 1 + GST
Specifications
- Operating Temperature
- -55℃~+175℃
- Drain to Source Voltage
- 30V
- Output Capacitance(Coss)
- 425pF
- Current - Continuous Drain(Id)
- 80A
- Ciss-Input Capacitance
- 1.18nF
- Pd - Power Dissipation
- 155W
- Reverse Transfer Capacitance (Crss)
- 170pF
- RDS(on)
- 7mΩ@10V;9mΩ@4.5V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 31nC@10V;31.5nC@4.5V
- Gate Threshold Voltage (Vgs(th))
- 2V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- Moisture sensitivity
- MSL 3 (168 hours)
- Packaging
- Tape & Reel (TR)
- Standard pack
- 5,000 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.122 g
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