MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
From
₹2.32
25,99,250 in stock
VISHAYDatasheet (PDF)
SIHB21N80AE-GE3
800V 17.4A 179W 235mΩ@10V 1 N-channel N-Channel D2PAK(TO-263) Single FETs, MOSFETs RoHS
D2PAK(TO-263)ROHS3 CompliantActive
N-Channel, Current:11A, Voltage:800V
- Manufacturer
- VISHAY
- Manufacturer part #
- SIHB21N80AE-GE3
- Store part #
- C3288119
- Package / case
- D2PAK(TO-263)
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
5 in stock
#C3288119
Stock & price checked 9 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹306.83 | ₹306.83 |
| 10+ | ₹299.66 | ₹2,996.60 |
| 30+ | ₹294.66 | ₹8,839.80 |
| 100+ | ₹289.88 | ₹28,988.00 |
1 × ₹306.83
₹306.83
excl. GST
₹362.06 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 1,000 per tube
SIHB21N80AE-GE3
₹306.83 for 1 + GST
Specifications
- Drain to Source Voltage
- 800V
- Operating Temperature
- -55℃~+150℃
- Output Capacitance(Coss)
- 53pF
- Current - Continuous Drain(Id)
- 17.4A
- Ciss-Input Capacitance
- 1.388nF
- Pd - Power Dissipation
- 179W
- Reverse Transfer Capacitance (Crss)
- 5pF
- RDS(on)
- 235mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 72nC@10V
- Gate Threshold Voltage (Vgs(th))
- 4V
- Type
- N-Channel
Packaging & compliance
- RoHS
- ROHS3 Compliant
- Lifecycle
- Active
- Moisture sensitivity
- MSL 1 (unlimited)
- ECCN
- EAR99
- Packaging
- Tube-packed
- Standard pack
- 1,000 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 2.3 g
Same category
