MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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₹2.32
25,99,250 in stock
VISHAYDatasheet (PDF)
SIHB6N80AE-GE3
62.5W 800V 5A 826mΩ@10V 1 N-channel N-Channel D2PAK(TO-263) Single FETs, MOSFETs RoHS
D2PAK(TO-263)ROHS3 CompliantActive
- Manufacturer
- VISHAY
- Manufacturer part #
- SIHB6N80AE-GE3
- Store part #
- C20346113
- Package / case
- D2PAK(TO-263)
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
20 in stock
#C20346113
Stock & price checked 46 h ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹409.89 | ₹409.89 |
| 10+ | ₹404.52 | ₹4,045.20 |
| 50+ | ₹400.87 | ₹20,043.50 |
| 100+ | ₹397.22 | ₹39,722.00 |
1 × ₹409.89
₹409.89
excl. GST
₹483.67 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 50 per tube
SIHB6N80AE-GE3
₹409.89 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 24pF
- Ciss-Input Capacitance
- 422pF
- Pd - Power Dissipation
- 62.5W
- Drain to Source Voltage
- 800V
- Operating Temperature
- -55℃~+150℃
- Current - Continuous Drain(Id)
- 5A
- Reverse Transfer Capacitance (Crss)
- 4pF
- RDS(on)
- 826mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 15nC
- Vgs
- ±30V
- Gate Threshold Voltage (Vgs(th))
- 2V
- Type
- N-Channel
Packaging & compliance
- RoHS
- ROHS3 Compliant
- Lifecycle
- Active
- Moisture sensitivity
- MSL 1 (unlimited)
- ECCN
- EAR99
- Packaging
- Tube-packed
- Standard pack
- 50 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 3.685 g
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