MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
From
₹2.32
25,99,250 in stock
HXY MOSFETDatasheet (PDF)
SIHD6N65E-GE3-HXY
800V 10.2A 44.4W 550mΩ@18V 1 N-channel N-Channel TO-252-2L Single FETs, MOSFETs
TO-252-2LRoHSActive
- Manufacturer
- HXY MOSFET
- Manufacturer part #
- SIHD6N65E-GE3-HXY
- Store part #
- C53133898
- Package / case
- TO-252-2L
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
12 in stock
#C53133898
Stock & price checked 31 h ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹174.85 | ₹174.85 |
| 10+ | ₹145.25 | ₹1,452.50 |
| 30+ | ₹129.10 | ₹3,873.00 |
| 100+ | ₹110.83 | ₹11,083.00 |
| 500+ | ₹102.65 | ₹51,325.00 |
| 1,000+ | ₹99.08 | ₹99,080.00 |
1 × ₹174.85
₹174.85
excl. GST
₹206.32 incl. 18% GST
- Dispatch in 7–10 working days
- GST invoice with every order
- Standard pack: 2,500 per reel
SIHD6N65E-GE3-HXY
₹174.85 for 1 + GST
Specifications
- Operating Temperature
- -55℃~+175℃
- Configuration
- Standalone
- Drain to Source Voltage
- 800V
- Current - Continuous Drain(Id)
- 10.2A
- Output Capacitance(Coss)
- 19pF
- Ciss-Input Capacitance
- 89pF
- Pd - Power Dissipation
- 44.4W
- Reverse Transfer Capacitance (Crss)
- 2.3pF
- RDS(on)
- 550mΩ@18V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 6.6nC
- Gate Threshold Voltage (Vgs(th))
- 2.6V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- Moisture sensitivity
- MSL 3 (168 hours)
- Packaging
- Tape & Reel (TR)
- Standard pack
- 2,500 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.44 g
Same category
