MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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VBsemi ElecDatasheet (PDF)
SiHF640-VB
200V 30A 126W 110mΩ@10V 1 N-channel N-Channel TO-220AB Single FETs, MOSFETs
TO-220ABRoHSActive
- Manufacturer
- VBsemi Elec
- Manufacturer part #
- SiHF640-VB
- Store part #
- C52110106
- Package / case
- TO-220AB
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
10 in stock
#C52110106
Stock & price checked 4 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹142.16 | ₹142.16 |
| 10+ | ₹117.13 | ₹1,171.30 |
| 50+ | ₹104.72 | ₹5,236.00 |
| 100+ | ₹83.39 | ₹8,339.00 |
| 500+ | ₹75.98 | ₹37,990.00 |
| 1,000+ | ₹72.28 | ₹72,280.00 |
1 × ₹142.16
₹142.16
excl. GST
₹167.75 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 50 per tube
SiHF640-VB
₹142.16 for 1 + GST
Specifications
- Operating Temperature
- -55℃~+175℃
- Drain to Source Voltage
- 200V
- Output Capacitance(Coss)
- 180pF
- Current - Continuous Drain(Id)
- 30A
- Ciss-Input Capacitance
- 1.8nF
- Pd - Power Dissipation
- 126W
- Reverse Transfer Capacitance (Crss)
- 80pF
- RDS(on)
- 110mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 34nC
- Vgs
- ±20V
- Gate Threshold Voltage (Vgs(th))
- 3V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- Packaging
- Tube-packed
- Standard pack
- 50 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 2.94 g
Overview
Applications
- Primary-side switch - N-channel MOSFET
Key features
- Trench power MOSFET
- Junction temperature 175°C
- PWM optimized
- 100% gate resistance (Rg) tested
- RoHS compliant (Directive 2002/95/EC)
Alternatives
Similar parts — check the datasheet before substituting.
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|---|---|---|---|---|---|---|
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