MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
From
₹1.93
26,12,850 in stock
VBsemi ElecDatasheet (PDF)
SiHG21N80AE-VB
N-Channel 800V 20A 150W Through Hole TO-247AC
TO-247ACRoHSActive
MOSFET N-CH 800V 20A TO-247AC
- Manufacturer
- VBsemi Elec
- Manufacturer part #
- SiHG21N80AE-VB
- Store part #
- C22357330
- Package / case
- TO-247AC
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
10 in stock
#C22357330
Stock & price checked 7 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹635.95 | ₹635.95 |
| 10+ | ₹568.29 | ₹5,682.90 |
| 25+ | ₹527.85 | ₹13,196.25 |
| 100+ | ₹436.56 | ₹43,656.00 |
| 600+ | ₹417.77 | ₹2,50,662.00 |
| 900+ | ₹409.35 | ₹3,68,415.00 |
1 × ₹635.95
₹635.95
excl. GST
₹750.42 incl. 18% GST
- Dispatch in 7–10 working days
- GST invoice with every order
- Standard pack: 25 per tube
SiHG21N80AE-VB
₹635.95 for 1 + GST
Specifications
- Operating Temperature
- -55℃~+150℃
- Drain to Source Voltage
- 800V
- Output Capacitance(Coss)
- 80pF
- Current - Continuous Drain(Id)
- 20A
- Ciss-Input Capacitance
- 2.3nF
- Pd - Power Dissipation
- 150W
- Reverse Transfer Capacitance (Crss)
- 4pF
- RDS(on)
- 205mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 90nC@10V
- Gate Threshold Voltage (Vgs(th))
- 4.5V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- Moisture sensitivity
- MSL 1 (unlimited)
- ECCN
- EAR99
- Packaging
- Tube-packed
- Standard pack
- 25 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 6.08 g
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