MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
From
₹2.32
26,12,850 in stock
VBsemi ElecDatasheet (PDF)
SIHG22N60EF-GE3-VB
600V 12A 160W 160mΩ@10V 1 N-channel N-Channel TO-247 Single FETs, MOSFETs
TO-247RoHSActive
MOSFET N-CH 600V 12A TO-247
- Manufacturer
- VBsemi Elec
- Manufacturer part #
- SIHG22N60EF-GE3-VB
- Store part #
- C51822585
- Package / case
- TO-247
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
5 in stock
#C51822585
Stock & price checked 8 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹393.74 | ₹393.74 |
| 10+ | ₹338.64 | ₹3,386.40 |
| 30+ | ₹304.41 | ₹9,132.30 |
| 90+ | ₹269.10 | ₹24,219.00 |
| 600+ | ₹253.17 | ₹1,51,902.00 |
| 900+ | ₹246.28 | ₹2,21,652.00 |
1 × ₹393.74
₹393.74
excl. GST
₹464.61 incl. 18% GST
- Dispatch in 7–10 working days
- GST invoice with every order
- Standard pack: 30 per tube
SIHG22N60EF-GE3-VB
₹393.74 for 1 + GST
Specifications
- Drain to Source Voltage
- 600V
- Operating Temperature
- -55℃~+150℃
- Output Capacitance(Coss)
- 330pF
- Current - Continuous Drain(Id)
- 12A
- Ciss-Input Capacitance
- 2.3nF
- Pd - Power Dissipation
- 160W
- Reverse Transfer Capacitance (Crss)
- 4pF
- RDS(on)
- 160mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 62nC@10V
- Gate Threshold Voltage (Vgs(th))
- 4.5V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- Moisture sensitivity
- MSL 3 (168 hours)
- Packaging
- Tube-packed
- Standard pack
- 30 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 1 g
Same category
