MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
From
₹2.32
25,99,250 in stock
HXY MOSFETDatasheet (PDF)
SIR158DP-T1-GE3-HXY
N-Channel 30V 150A 187W Surface Mount DFN5x6-8L
DFN5x6-8LRoHSActive
MOSFET N-CH 30V 150A DFN5x6-8L
- Manufacturer
- HXY MOSFET
- Manufacturer part #
- SIR158DP-T1-GE3-HXY
- Store part #
- C22366656
- Package / case
- DFN5x6-8L
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
5 in stock
#C22366656
Stock & price checked 6 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 5+ | ₹44.20 | ₹221.00 |
| 50+ | ₹34.70 | ₹1,735.00 |
| 150+ | ₹30.64 | ₹4,596.00 |
| 500+ | ₹25.56 | ₹12,780.00 |
| 2,500+ | ₹23.30 | ₹58,250.00 |
| 5,000+ | ₹21.95 | ₹1,09,750.00 |
5 × ₹44.20
₹221.00
excl. GST
₹260.78 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 5,000 per reel
SIR158DP-T1-GE3-HXY
₹221.00 for 5 + GST
Specifications
- Configuration
- Standalone
- Operating Temperature
- -55℃~+150℃
- Drain to Source Voltage
- 30V
- Output Capacitance(Coss)
- 340pF
- Current - Continuous Drain(Id)
- 150A
- Ciss-Input Capacitance
- 4.345nF
- Pd - Power Dissipation
- 187W
- Reverse Transfer Capacitance (Crss)
- 225pF
- RDS(on)
- 2mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 56.9nC@10V
- Gate Threshold Voltage (Vgs(th))
- 2.5V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- Moisture sensitivity
- MSL 3 (168 hours)
- Packaging
- Tape & Reel (TR)
- Standard pack
- 5,000 / Reel
- Sold per
- Piece
- Minimum order
- 5 (multiples of 5)
- Unit weight
- 0.144 g
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