MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
From
₹2.32
25,99,250 in stock
HXY MOSFETDatasheet (PDF)
SIR182LDP-T1-RE3-HXY
113W 60V 125A 2.4mΩ@10V 1 N-channel N-Channel DFN-8L(5x6) Single FETs, MOSFETs
DFN-8L(5x6)RoHSActive
- Manufacturer
- HXY MOSFET
- Manufacturer part #
- SIR182LDP-T1-RE3-HXY
- Store part #
- C53262854
- Package / case
- DFN-8L(5x6)
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
99 in stock
#C53262854
Stock & price checked 6 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹226.37 | ₹226.37 |
| 10+ | ₹190.50 | ₹1,905.00 |
| 30+ | ₹170.96 | ₹5,128.80 |
| 100+ | ₹148.63 | ₹14,863.00 |
| 500+ | ₹138.74 | ₹69,370.00 |
| 1,000+ | ₹134.46 | ₹1,34,460.00 |
1 × ₹226.37
₹226.37
excl. GST
₹267.12 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 5,000 per reel
SIR182LDP-T1-RE3-HXY
₹226.37 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 2.188nF
- Ciss-Input Capacitance
- 4.61nF
- Pd - Power Dissipation
- 113W
- Drain to Source Voltage
- 60V
- Configuration
- Standalone
- Operating Temperature
- -55℃~+150℃
- Current - Continuous Drain(Id)
- 125A
- Reverse Transfer Capacitance (Crss)
- 66pF
- RDS(on)
- 2.4mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 74.37nC@10V
- Vgs
- ±20V
- Gate Threshold Voltage (Vgs(th))
- 1.6V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- Moisture sensitivity
- MSL 3 (168 hours)
- Packaging
- Tape & Reel (TR)
- Standard pack
- 5,000 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.152 g
Same category
