Varnitronics
SiR404DP-T1-GE3 VISHAY
VISHAY

SiR404DP-T1-GE3

20V 60A 6.25W 1.6mΩ@10V 1 N-channel PowerPAKSO-8 Single FETs, MOSFETs RoHS

PowerPAKSO-8ROHS CompliantActive
Manufacturer
VISHAY
Manufacturer part #
SiR404DP-T1-GE3
Store part #
C5373029
Package / case
PowerPAKSO-8
Packaging
Tape & Reel (TR)
Datasheet (PDF)

Every Order Guarantee

100% Authentic · 30-Day Return or Replacement · policy

29 in stock

#C5373029

Stock & price checked 9 days ago

QuantityUnit pricePack price
1+₹627.19₹627.19
10+₹618.38₹6,183.80
30+₹612.58₹18,377.40
100+₹606.56₹60,656.00

1 × ₹627.19

₹627.19

excl. GST

₹740.08 incl. 18% GST

Need volume or a scheduled delivery? Request a quote
  • Dispatch in 15-18 working days
  • GST invoice with every order
  • Standard pack: 1,500 per reel

SiR404DP-T1-GE3

₹627.19 for 1 + GST

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Specifications

Drain to Source Voltage
20V
Operating Temperature
-55℃~+150℃
Current - Continuous Drain(Id)
60A
Ciss-Input Capacitance
8.13nF
Pd - Power Dissipation
6.25W
Reverse Transfer Capacitance (Crss)
735pF
RDS(on)
1.6mΩ@10V
Number
1 N-channel
Gate Charge(Qg)
64.5nC@10V
Gate Threshold Voltage (Vgs(th))
600mV

Packaging & compliance

RoHS
ROHS Compliant
Lifecycle
Active
ECCN
EAR99
Packaging
Tape & Reel (TR)
Standard pack
1,500 / Reel
Sold per
Piece
Minimum order
1
Unit weight
0.327 g

Overview

N-Channel 20 V (D-S) MOSFET in PowerPAK SO-8 single package. PowerPAK is a new packaging technology developed based on the SO-8 package. The PowerPAK SO-8 shares the same footprint and pin configuration as the standard SO-8, making it a drop-in replacement. As a leadless package, it utilizes the entire SO-8 footprint to accommodate a larger die than the standard SO-8. The die attach pad on the bottom of the die is exposed to provide a direct low-resistance thermal path, and the package height is lower than that of the standard SO-8, making it suitable for space-constrained applications. The PowerPAK single package is easy to use — its pin layout and dimensions are identical to those of standard SO-8 devices. The land pads are a direct match to SO-8, with only the drain connection area extended, allowing installation onto existing SO-8 pad patterns.

Applications

  • Fixed Telecom - OR-ing - Point of Load (POL)

Key features

  • 3rd Generation Trench Field Effect Transistor (TrenchFET Gen III) Power MOSFET
  • 100% Rg and UIS tested
  • 2.5 V and 3.3 V gate drive MOSFET for DC/DC applications
  • RoHS compliant
  • Halogen-free

Alternatives

Similar parts — check the datasheet before substituting.

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