MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
From
₹2.32
26,12,850 in stock
VBsemi ElecDatasheet (PDF)
SIR436DP-T1-GE3-VB
N-Channel 30V 120A 210W Surface Mount DFN5x6-8
DFN5x6-8RoHSActive
MOSFET N-CH 30V 120A DFN5x6-8
- Manufacturer
- VBsemi Elec
- Manufacturer part #
- SIR436DP-T1-GE3-VB
- Store part #
- C22389241
- Package / case
- DFN5x6-8
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
50 in stock
#C22389241
Stock & price checked 8 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹107.14 | ₹107.14 |
| 10+ | ₹87.17 | ₹871.70 |
| 30+ | ₹77.09 | ₹2,312.70 |
| 100+ | ₹67.22 | ₹6,722.00 |
| 500+ | ₹61.14 | ₹30,570.00 |
| 1,000+ | ₹58.19 | ₹58,190.00 |
1 × ₹107.14
₹107.14
excl. GST
₹126.43 incl. 18% GST
- Dispatch in 7–10 working days
- GST invoice with every order
- Standard pack: 5,000 per reel
SIR436DP-T1-GE3-VB
₹107.14 for 1 + GST
Specifications
- Drain to Source Voltage
- 30V
- Operating Temperature
- -55℃~+175℃
- Output Capacitance(Coss)
- 1.025nF
- Current - Continuous Drain(Id)
- 120A
- Ciss-Input Capacitance
- 3.2nF
- Pd - Power Dissipation
- 210W
- Reverse Transfer Capacitance (Crss)
- 970pF
- RDS(on)
- 3mΩ@10V;5mΩ@4.5V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 71nC@10V;61.5nC@4.5V
- Gate Threshold Voltage (Vgs(th))
- 1V;2.5V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- Moisture sensitivity
- MSL 3 (168 hours)
- ECCN
- EAR99
- Packaging
- Tape & Reel (TR)
- Standard pack
- 5,000 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.18 g
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