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HXY MOSFETDatasheet (PDF)
SIR5102DP-T1-BE3-HXY
176W 100V 120A 3.6mΩ@10V 1 N-channel N-Channel DFN-8L(5x6) Single FETs, MOSFETs
DFN-8L(5x6)RoHSActive
- Manufacturer
- HXY MOSFET
- Manufacturer part #
- SIR5102DP-T1-BE3-HXY
- Store part #
- C53262935
- Package / case
- DFN-8L(5x6)
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
99 in stock
#C53262935
Stock & price checked 6 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹120.35 | ₹120.35 |
| 10+ | ₹99.61 | ₹996.10 |
| 30+ | ₹89.24 | ₹2,677.20 |
| 100+ | ₹79.09 | ₹7,909.00 |
| 500+ | ₹72.82 | ₹36,410.00 |
| 1,000+ | ₹69.58 | ₹69,580.00 |
1 × ₹120.35
₹120.35
excl. GST
₹142.01 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 5,000 per reel
SIR5102DP-T1-BE3-HXY
₹120.35 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 592pF
- Ciss-Input Capacitance
- 4.102nF
- Pd - Power Dissipation
- 176W
- Configuration
- Standalone
- Drain to Source Voltage
- 100V
- Operating Temperature
- -55℃~+150℃
- Current - Continuous Drain(Id)
- 120A
- Reverse Transfer Capacitance (Crss)
- 19.8pF
- RDS(on)
- 3.6mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 69nC@10V
- Vgs
- ±20V
- Gate Threshold Voltage (Vgs(th))
- 3V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- Moisture sensitivity
- MSL 3 (168 hours)
- Packaging
- Tape & Reel (TR)
- Standard pack
- 5,000 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.145 g
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