MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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HXY MOSFETDatasheet (PDF)
SIR5102DP-T1-RE3-HXY
176W 100V 120A 3.6mΩ@10V 1 N-channel N-Channel DFN-8L(5x6) Single FETs, MOSFETs
DFN-8L(5x6)RoHSActive
- Manufacturer
- HXY MOSFET
- Manufacturer part #
- SIR5102DP-T1-RE3-HXY
- Store part #
- C53262904
- Package / case
- DFN-8L(5x6)
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
99 in stock
#C53262904
Stock & price checked 41 h ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹253.65 | ₹253.65 |
| 10+ | ₹218.22 | ₹2,182.20 |
| 30+ | ₹196.08 | ₹5,882.40 |
| 100+ | ₹173.33 | ₹17,333.00 |
| 500+ | ₹163.23 | ₹81,615.00 |
| 1,000+ | ₹158.72 | ₹1,58,720.00 |
1 × ₹253.65
₹253.65
excl. GST
₹299.31 incl. 18% GST
- Dispatch in 7–10 working days
- GST invoice with every order
- Standard pack: 5,000 per reel
SIR5102DP-T1-RE3-HXY
₹253.65 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 592pF
- Ciss-Input Capacitance
- 4.102nF
- Pd - Power Dissipation
- 176W
- Configuration
- Standalone
- Drain to Source Voltage
- 100V
- Operating Temperature
- -55℃~+150℃
- Current - Continuous Drain(Id)
- 120A
- Reverse Transfer Capacitance (Crss)
- 19.8pF
- RDS(on)
- 3.6mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 69nC@10V
- Vgs
- ±20V
- Gate Threshold Voltage (Vgs(th))
- 3V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- Moisture sensitivity
- MSL 3 (168 hours)
- Packaging
- Tape & Reel (TR)
- Standard pack
- 5,000 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.145 g
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