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HXY MOSFETDatasheet (PDF)
SIR516DP-T1-RE3-HXY
97W 100V 75A 6.4mΩ@10V 1 N-channel N-Channel DFN-8L(5x6) Single FETs, MOSFETs
DFN-8L(5x6)RoHSActive
- Manufacturer
- HXY MOSFET
- Manufacturer part #
- SIR516DP-T1-RE3-HXY
- Store part #
- C53262901
- Package / case
- DFN-8L(5x6)
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
99 in stock
#C53262901
Stock & price checked 2 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹215.20 | ₹215.20 |
| 10+ | ₹181.05 | ₹1,810.50 |
| 30+ | ₹162.37 | ₹4,871.10 |
| 100+ | ₹141.32 | ₹14,132.00 |
| 500+ | ₹131.88 | ₹65,940.00 |
| 1,000+ | ₹127.58 | ₹1,27,580.00 |
1 × ₹215.20
₹215.20
excl. GST
₹253.94 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 5,000 per reel
SIR516DP-T1-RE3-HXY
₹215.20 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 736pF
- Ciss-Input Capacitance
- 2.944nF
- Pd - Power Dissipation
- 97W
- Configuration
- Standalone
- Drain to Source Voltage
- 100V
- Operating Temperature
- -55℃~+150℃
- Current - Continuous Drain(Id)
- 75A
- Reverse Transfer Capacitance (Crss)
- 2.04pF
- RDS(on)
- 6.4mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 39.4nC@10V
- Vgs
- ±20V
- Gate Threshold Voltage (Vgs(th))
- 1.6V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- Moisture sensitivity
- MSL 3 (168 hours)
- Packaging
- Tape & Reel (TR)
- Standard pack
- 5,000 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.14 g
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