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HXY MOSFETDatasheet (PDF)
SIR668ADP-T1-RE3-HXY
100V 120A 176W 3.6mΩ@10V 1 N-channel N-Channel DFN-8L(5x6) Single FETs, MOSFETs
DFN-8L(5x6)RoHSActive
- Manufacturer
- HXY MOSFET
- Manufacturer part #
- SIR668ADP-T1-RE3-HXY
- Store part #
- C55510085
- Package / case
- DFN-8L(5x6)
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
29 in stock
#C55510085
Stock & price checked 3 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹133.99 | ₹133.99 |
| 10+ | ₹108.84 | ₹1,088.40 |
| 30+ | ₹96.05 | ₹2,881.50 |
| 100+ | ₹83.69 | ₹8,369.00 |
| 500+ | ₹76.11 | ₹38,055.00 |
| 1,000+ | ₹72.21 | ₹72,210.00 |
1 × ₹133.99
₹133.99
excl. GST
₹158.11 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 5,000 per reel
SIR668ADP-T1-RE3-HXY
₹133.99 for 1 + GST
Specifications
- Drain to Source Voltage
- 100V
- Operating Temperature
- -55℃~+150℃
- Current - Continuous Drain(Id)
- 120A
- Output Capacitance(Coss)
- 592pF
- Ciss-Input Capacitance
- 4.102nF
- Pd - Power Dissipation
- 176W
- Reverse Transfer Capacitance (Crss)
- 19.8pF
- RDS(on)
- 3.6mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 69nC
- Vgs
- ±20V
- Gate Threshold Voltage (Vgs(th))
- 3V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- Moisture sensitivity
- MSL 3 (168 hours)
- Packaging
- Tape & Reel (TR)
- Standard pack
- 5,000 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.187 g
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