MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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₹2.32
25,99,250 in stock
VBsemi ElecDatasheet (PDF)
SIR802DP-T1-GE3-VB
N-Channel 30V 160A 3.75W Surface Mount DFN5x6-8
DFN5x6-8RoHSActive
MOSFET N-CH 30V 160A DFN5x6-8
- Manufacturer
- VBsemi Elec
- Manufacturer part #
- SIR802DP-T1-GE3-VB
- Store part #
- C558278
- Package / case
- DFN5x6-8
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
54 in stock
#C558278
Stock & price checked 23 h ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹144.95 | ₹144.95 |
| 10+ | ₹118.05 | ₹1,180.50 |
| 30+ | ₹104.82 | ₹3,144.60 |
| 100+ | ₹91.38 | ₹9,138.00 |
| 500+ | ₹71.43 | ₹35,715.00 |
| 1,000+ | ₹67.43 | ₹67,430.00 |
1 × ₹144.95
₹144.95
excl. GST
₹171.04 incl. 18% GST
- Dispatch in 7–10 working days
- GST invoice with every order
- Standard pack: 5,000 per reel
SIR802DP-T1-GE3-VB
₹144.95 for 1 + GST
Specifications
- Operating Temperature
- -55℃~+175℃
- Drain to Source Voltage
- 30V
- Output Capacitance(Coss)
- 1.725nF
- Current - Continuous Drain(Id)
- 160A
- Ciss-Input Capacitance
- 9.9nF
- Pd - Power Dissipation
- 3.75W
- Reverse Transfer Capacitance (Crss)
- 970pF
- RDS(on)
- 1.8mΩ@10V;2.5mΩ@4.5V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 83nC@10V;82nC@4.5V
- Gate Threshold Voltage (Vgs(th))
- 2.5V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- Moisture sensitivity
- MSL 3 (168 hours)
- ECCN
- EAR99
- Packaging
- Tape & Reel (TR)
- Standard pack
- 5,000 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.015 g
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