MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
From
₹2.32
26,12,850 in stock
HXY MOSFETDatasheet (PDF)
SIR850DP-T1-GE3-HXY
N-Channel 30V 80A 37W Surface Mount DFN5x6-8L
DFN5x6-8LRoHSActive
MOSFET N-CH 30V 80A DFN5x6-8L
- Manufacturer
- HXY MOSFET
- Manufacturer part #
- SIR850DP-T1-GE3-HXY
- Store part #
- C22366428
- Package / case
- DFN5x6-8L
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
115 in stock
#C22366428
Stock & price checked 8 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 5+ | ₹43.43 | ₹217.15 |
| 50+ | ₹34.40 | ₹1,720.00 |
| 150+ | ₹30.53 | ₹4,579.50 |
| 500+ | ₹25.71 | ₹12,855.00 |
| 2,500+ | ₹23.56 | ₹58,900.00 |
| 5,000+ | ₹22.27 | ₹1,11,350.00 |
5 × ₹43.43
₹217.15
excl. GST
₹256.24 incl. 18% GST
- Dispatch in 7–10 working days
- GST invoice with every order
- Standard pack: 5,000 per reel
SIR850DP-T1-GE3-HXY
₹217.15 for 5 + GST
Specifications
- Output Capacitance(Coss)
- 310pF
- Ciss-Input Capacitance
- 1.93nF
- Pd - Power Dissipation
- 37W
- Configuration
- Standalone
- Operating Temperature
- -55℃~+150℃
- Drain to Source Voltage
- 30V
- Current - Continuous Drain(Id)
- 80A
- Reverse Transfer Capacitance (Crss)
- 260pF
- RDS(on)
- 4.7mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 38nC@10V
- Vgs
- ±20V
- Gate Threshold Voltage (Vgs(th))
- 1.7V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- Moisture sensitivity
- MSL 3 (168 hours)
- Packaging
- Tape & Reel (TR)
- Standard pack
- 5,000 / Reel
- Sold per
- Piece
- Minimum order
- 5 (multiples of 5)
- Unit weight
- 0.128 g
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