MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
From
₹2.32
25,99,250 in stock
MSKSEMIDatasheet (PDF)
SIS410DN-T1-GE3-MS
15W 20V 60A 4mΩ@4.5V 1 N-channel N-Channel DFN-8L(3x3) Single FETs, MOSFETs
DFN-8L(3x3)RoHSActive
- Manufacturer
- MSKSEMI
- Manufacturer part #
- SIS410DN-T1-GE3-MS
- Store part #
- C51908778
- Package / case
- DFN-8L(3x3)
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
1,000 in stock
#C51908778
Stock & price checked 32 h ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 5+ | ₹43.57 | ₹217.85 |
| 50+ | ₹34.89 | ₹1,744.50 |
| 150+ | ₹31.17 | ₹4,675.50 |
| 500+ | ₹26.53 | ₹13,265.00 |
| 2,500+ | ₹24.46 | ₹61,150.00 |
| 5,000+ | ₹23.22 | ₹1,16,100.00 |
5 × ₹43.57
₹217.85
excl. GST
₹257.06 incl. 18% GST
- Dispatch in 7–10 working days
- GST invoice with every order
- Standard pack: 5,000 per reel
SIS410DN-T1-GE3-MS
₹217.85 for 5 + GST
Specifications
- Output Capacitance(Coss)
- 407pF
- Ciss-Input Capacitance
- 2.5nF
- Pd - Power Dissipation
- 15W
- Drain to Source Voltage
- 20V
- Operating Temperature
- -55℃~+150℃
- Current - Continuous Drain(Id)
- 60A
- Reverse Transfer Capacitance (Crss)
- 386pF
- RDS(on)
- 4mΩ@4.5V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 32nC
- Vgs
- ±12V
- Gate Threshold Voltage (Vgs(th))
- 700mV
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- Moisture sensitivity
- MSL 3 (168 hours)
- Packaging
- Tape & Reel (TR)
- Standard pack
- 5,000 / Reel
- Sold per
- Piece
- Minimum order
- 5 (multiples of 5)
- Unit weight
- 0.107 g
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