MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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HXY MOSFETDatasheet (PDF)
SIS496EDNT-T1-GE3-HXY
62.5W 30V 60A 4mΩ@10V 1 N-channel N-Channel DFN-8L(3x3) Single FETs, MOSFETs
DFN-8L(3x3)RoHSActive
- Manufacturer
- HXY MOSFET
- Manufacturer part #
- SIS496EDNT-T1-GE3-HXY
- Store part #
- C53263381
- Package / case
- DFN-8L(3x3)
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
70 in stock
#C53263381
Stock & price checked 4 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 5+ | ₹28.27 | ₹141.35 |
| 50+ | ₹22.65 | ₹1,132.50 |
| 150+ | ₹20.24 | ₹3,036.00 |
| 500+ | ₹17.23 | ₹8,615.00 |
| 2,500+ | ₹15.89 | ₹39,725.00 |
| 5,000+ | ₹15.08 | ₹75,400.00 |
5 × ₹28.27
₹141.35
excl. GST
₹166.79 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 5,000 per reel
SIS496EDNT-T1-GE3-HXY
₹141.35 for 5 + GST
Specifications
- Output Capacitance(Coss)
- 400pF
- Ciss-Input Capacitance
- 3.075nF
- Pd - Power Dissipation
- 62.5W
- Configuration
- Standalone
- Drain to Source Voltage
- 30V
- Operating Temperature
- -55℃~+150℃
- Current - Continuous Drain(Id)
- 60A
- Reverse Transfer Capacitance (Crss)
- 315pF
- RDS(on)
- 4mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 31.6nC@4.5V
- Vgs
- ±20V
- Gate Threshold Voltage (Vgs(th))
- 2.5V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- Moisture sensitivity
- MSL 3 (168 hours)
- Packaging
- Tape & Reel (TR)
- Standard pack
- 5,000 / Reel
- Sold per
- Piece
- Minimum order
- 5 (multiples of 5)
- Unit weight
- 0.071 g
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