MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
From
₹2.32
25,99,250 in stock
HXY MOSFETDatasheet (PDF)
SISA16DN-T1-GE3-HXY
37.5W 30V 35A 7.5mΩ@10V 1 N-channel N-Channel DFN-8L(3x3) Single FETs, MOSFETs
DFN-8L(3x3)RoHSActive
- Manufacturer
- HXY MOSFET
- Manufacturer part #
- SISA16DN-T1-GE3-HXY
- Store part #
- C53263179
- Package / case
- DFN-8L(3x3)
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
98 in stock
#C53263179
Stock & price checked 3 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹55.63 | ₹55.63 |
| 10+ | ₹44.47 | ₹444.70 |
| 30+ | ₹39.74 | ₹1,192.20 |
| 100+ | ₹33.93 | ₹3,393.00 |
| 500+ | ₹31.37 | ₹15,685.00 |
| 1,000+ | ₹29.65 | ₹29,650.00 |
1 × ₹55.63
₹55.63
excl. GST
₹65.64 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 5,000 per reel
SISA16DN-T1-GE3-HXY
₹55.63 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 131pF
- Ciss-Input Capacitance
- 940pF
- Pd - Power Dissipation
- 37.5W
- Operating Temperature
- -55℃~+175℃
- Configuration
- Standalone
- Drain to Source Voltage
- 30V
- Current - Continuous Drain(Id)
- 35A
- Reverse Transfer Capacitance (Crss)
- 109pF
- RDS(on)
- 7.5mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 9.8nC@4.5V
- Vgs
- ±20V
- Gate Threshold Voltage (Vgs(th))
- 2.5V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- Moisture sensitivity
- MSL 3 (168 hours)
- Packaging
- Tape & Reel (TR)
- Standard pack
- 5,000 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.07 g
Same category
