MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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26,12,850 in stock
HXY MOSFETDatasheet (PDF)
SISA96DN-T1-GE3-HXY
N-Channel 30V 50A 37.5W Surface Mount DFN3x3-8L
DFN3x3-8LRoHSActive
MOSFET N-CH 30V 50A DFN3x3-8L
- Manufacturer
- HXY MOSFET
- Manufacturer part #
- SISA96DN-T1-GE3-HXY
- Store part #
- C22366660
- Package / case
- DFN3x3-8L
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
265 in stock
#C22366660
Stock & price checked 8 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 5+ | ₹17.93 | ₹89.65 |
| 50+ | ₹14.17 | ₹708.50 |
| 150+ | ₹12.29 | ₹1,843.50 |
| 500+ | ₹10.89 | ₹5,445.00 |
| 2,500+ | ₹9.76 | ₹24,400.00 |
| 5,000+ | ₹9.19 | ₹45,950.00 |
5 × ₹17.93
₹89.65
excl. GST
₹105.79 incl. 18% GST
- Dispatch in 7–10 working days
- GST invoice with every order
- Standard pack: 5,000 per reel
SISA96DN-T1-GE3-HXY
₹89.65 for 5 + GST
Specifications
- Output Capacitance(Coss)
- 131pF
- Ciss-Input Capacitance
- 940pF
- Pd - Power Dissipation
- 37.5W
- Configuration
- Standalone
- Operating Temperature
- -55℃~+175℃
- Drain to Source Voltage
- 30V
- Current - Continuous Drain(Id)
- 35A
- Reverse Transfer Capacitance (Crss)
- 109pF
- RDS(on)
- 7.5mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 9.8nC@4.5V
- Vgs
- ±20V
- Gate Threshold Voltage (Vgs(th))
- 2.5V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- Moisture sensitivity
- MSL 3 (168 hours)
- Packaging
- Tape & Reel (TR)
- Standard pack
- 5,000 / Reel
- Sold per
- Piece
- Minimum order
- 5 (multiples of 5)
- Unit weight
- 0.058 g
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