MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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HXY MOSFETDatasheet (PDF)
SISS26DN-T1-GE3-HXY
60V 100A 73.5W 4mΩ@10V 1 N-channel N-Channel DFN-8L(3x3) Single FETs, MOSFETs
DFN-8L(3x3)RoHSActive
- Manufacturer
- HXY MOSFET
- Manufacturer part #
- SISS26DN-T1-GE3-HXY
- Store part #
- C54582835
- Package / case
- DFN-8L(3x3)
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
47 in stock
#C54582835
Stock & price checked 2 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹198.70 | ₹198.70 |
| 10+ | ₹167.24 | ₹1,672.40 |
| 30+ | ₹150.00 | ₹4,500.00 |
| 100+ | ₹130.61 | ₹13,061.00 |
| 500+ | ₹108.84 | ₹54,420.00 |
| 1,000+ | ₹104.74 | ₹1,04,740.00 |
1 × ₹198.70
₹198.70
excl. GST
₹234.47 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 5,000 per reel
SISS26DN-T1-GE3-HXY
₹198.70 for 1 + GST
Specifications
- Configuration
- Standalone
- Drain to Source Voltage
- 60V
- Current - Continuous Drain(Id)
- 100A
- Output Capacitance(Coss)
- 735pF
- Ciss-Input Capacitance
- 2.18nF
- Pd - Power Dissipation
- 73.5W
- Reverse Transfer Capacitance (Crss)
- 42pF
- RDS(on)
- 4mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 35nC@10V
- Gate Threshold Voltage (Vgs(th))
- 1.7V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- Moisture sensitivity
- MSL 3 (168 hours)
- Packaging
- Tape & Reel (TR)
- Standard pack
- 5,000 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.1 g
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