HXY MOSFETDatasheet (PDF)
SPT40N120F1AT8TL-HXY
417W 80A 1.2kV TO-247 Single IGBTs
TO-247RoHSActive
- Manufacturer
- HXY MOSFET
- Manufacturer part #
- SPT40N120F1AT8TL-HXY
- Store part #
- C49003423
- Package / case
- TO-247
- Category
- Single IGBTs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
9 in stock
#C49003423
Stock & price checked 8 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹747.18 | ₹747.18 |
| 10+ | ₹649.25 | ₹6,492.50 |
| 30+ | ₹591.26 | ₹17,737.80 |
| 90+ | ₹532.41 | ₹47,916.90 |
| 510+ | ₹505.13 | ₹2,57,616.30 |
| 990+ | ₹492.90 | ₹4,87,971.00 |
1 × ₹747.18
₹747.18
excl. GST
₹881.67 incl. 18% GST
- Dispatch in 7–10 working days
- GST invoice with every order
- Standard pack: 30 per tube
SPT40N120F1AT8TL-HXY
₹747.18 for 1 + GST
Specifications
- Td(off)
- 195ns
- Pd - Power Dissipation
- 417W
- Td(on)
- 48ns
- Current - Collector(Ic)
- 80A
- Collector-Emitter Breakdown Voltage (Vces)
- 1.2kV
- Reverse Transfer Capacitance (Cres)
- 35pF
- Gate-Emitter Threshold Voltage (Vge(th)@Ic)
- 5.1V@0.25mA
- Operating Temperature
- -40℃~+175℃
- Vce Saturation(VCE(sat))
- 1.9V@40A,15V
- Reverse Recovery Time(trr)
- 375ns
- Switching Energy(Eoff)
- 1.6mJ
- Turn-On Energy (Eon)
- 2.65mJ
- Input Capacitance(Cies)
- 5.047nF
- Gate Charge(Qg)
- 170nC@15V
- Output Capacitance(Coes)
- 161pF
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- Moisture sensitivity
- MSL 3 (168 hours)
- Packaging
- Tube-packed
- Standard pack
- 30 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 7.797 g
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