STH2N120K5-2AG

N-Channel 1.2kV 1.5A 60W Surface Mount TO-263-3

TO-263-3ROHS3 CompliantActive

MOSFET N-CH 1.2kV 1.5A TO-263-3

Manufacturer: ST
Manufacturer part #: STH2N120K5-2AG
Store part #: C2970010
Package / case: TO-263-3
Category: Single FETs, MOSFETs
Packaging: Tape & Reel (TR)

Datasheet (PDF)

Every Order Guarantee

100% Authentic · 30-Day Return or Replacement · policy

25 in stock

#C2970010

Stock & price checked 5 days ago

Quantity	Unit price	Pack price
1+	₹653.13	₹653.13
10+	₹545.62	₹5,456.20
30+	₹480.22	₹14,406.60
100+	₹425.16	₹42,516.00

Quantity (min 1)

1 × ₹653.13

₹653.13

excl. GST

₹770.69 incl. 18% GST

Need volume or a scheduled delivery? Request a quote

Dispatch in 15-18 working days
GST invoice with every order
Standard pack: 1,000 per reel

STH2N120K5-2AG

₹653.13 for 1 + GST

Need this with the rest of your board? Upload the BOM — we price every line.Upload BOM

Specifications

Output Capacitance(Coss): 13pF
Ciss-Input Capacitance: 124pF
Pd - Power Dissipation: 60W
Operating Temperature: -55℃~+150℃
Drain to Source Voltage: 1.2kV
Current - Continuous Drain(Id): 1.5A
Reverse Transfer Capacitance (Crss): 0.5pF
RDS(on): 10Ω@10V
Number: 1 N-channel
Gate Charge(Qg): 5.3nC
Vgs: ±30V
Gate Threshold Voltage (Vgs(th)): 4V
Type: N-Channel

Packaging & compliance

RoHS: ROHS3 Compliant
Lifecycle: Active
ECCN: EAR99
Packaging: Tape & Reel (TR)
Standard pack: 1,000 / Reel
Sold per: Piece
Minimum order: 1
Unit weight: 2.316 g

Overview

This ultra-high-voltage N-channel power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is significantly reduced on-resistance and ultra-low gate charge, making it ideal for applications with demanding power density and efficiency requirements.