STH60N099DM9-2AG

N-Channel 600V 27A 179W Surface Mount H2PAK-2

H2PAK-2ROHS3 CompliantActive

MOSFET N-CH 600V 27A H2PAK-2

Manufacturer: ST
Manufacturer part #: STH60N099DM9-2AG
Store part #: C23984841
Package / case: H2PAK-2
Category: Single FETs, MOSFETs
Packaging: Tape & Reel (TR)

Datasheet (PDF)

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30 in stock

#C23984841

Stock & price checked 5 days ago

Quantity	Unit price	Pack price
1+	₹545.21	₹545.21
10+	₹532.39	₹5,323.90
30+	₹523.70	₹15,711.00
100+	₹515.22	₹51,522.00

Quantity (min 1)

1 × ₹545.21

₹545.21

excl. GST

₹643.35 incl. 18% GST

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Standard pack: 1,000 per reel

STH60N099DM9-2AG

₹545.21 for 1 + GST

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Specifications

Drain to Source Voltage: 600V
Operating Temperature: -55℃~+150℃
Current - Continuous Drain(Id): 27A
Pd - Power Dissipation: 179W
RDS(on): 99mΩ@10V
Number: 1 N-channel
Gate Charge(Qg): 44nC@10V
Gate Threshold Voltage (Vgs(th)): 4.5V
Type: N-Channel

Packaging & compliance

RoHS: ROHS3 Compliant
Lifecycle: Active
ECCN: EAR99
Packaging: Tape & Reel (TR)
Standard pack: 1,000 / Reel
Sold per: Piece
Minimum order: 1
Unit weight: 1.812 g

Overview

This N-channel Power MOSFET is based on the most innovative super-junction MDmesh DM9 technology, suitable for medium/high voltage MOSFETs featuring very low RDS(on) per area coupled with a fast-recovery diode. The silicon-based DM9 technology benefits from a multi-drain manufacturing process which allows an enhanced device structure. The fast-recovery diode featuring very low recovery charge (Ωrr), time (trr) and RDS(on) makes this fast-switching super-junction Power MOSFET tailored for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.

Applications

High efficiency switching applications

Key features

Automotive-grade N-channel 600 V, 76 mΩ typ., 27 A MDmesh DM9 Power MOSFET in an H²PAK-2 package
AEC-Q101 qualified
Fast-recovery body diode
Worldwide best RDS(on) per area among silicon-based fast recovery devices
Low gate charge, input capacitance and resistance
100% avalanche tested
Extremely high dv/dt ruggednes