Varnitronics
STL13N60DM2 ST
ST

STL13N60DM2

52W 600V 8A 370mΩ@10V 1 N-channel N-Channel VDFN-8-Power Single FETs, MOSFETs RoHS

VDFN-8-PowerROHS3 CompliantActive

N-channel, Current: 8A, Voltage: 600V

Manufacturer
ST
Manufacturer part #
STL13N60DM2
Store part #
C2971520
Package / case
VDFN-8-Power
Packaging
Tape & Reel (TR)
Datasheet (PDF)

Every Order Guarantee

100% Authentic · 30-Day Return or Replacement · policy

20 in stock

#C2971520

Stock & price checked 4 days ago

QuantityUnit pricePack price
1+₹665.67₹665.67
10+₹656.86₹6,568.60
30+₹650.84₹19,525.20
100+₹645.03₹64,503.00

1 × ₹665.67

₹665.67

excl. GST

₹785.49 incl. 18% GST

Need volume or a scheduled delivery? Request a quote
  • Dispatch in 15-18 working days
  • GST invoice with every order
  • Standard pack: 3,000 per reel

STL13N60DM2

₹665.67 for 1 + GST

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Specifications

Output Capacitance(Coss)
38pF
Ciss-Input Capacitance
730pF
Pd - Power Dissipation
52W
Operating Temperature
-55℃~+150℃
Drain to Source Voltage
600V
Current - Continuous Drain(Id)
8A
Reverse Transfer Capacitance (Crss)
0.9pF
RDS(on)
370mΩ@10V
Number
1 N-channel
Gate Charge(Qg)
19nC@10V
Vgs
±25V
Gate Threshold Voltage (Vgs(th))
5V
Type
N-Channel

Packaging & compliance

RoHS
ROHS3 Compliant
Lifecycle
Active
ECCN
EAR99
Packaging
Tape & Reel (TR)
Standard pack
3,000 / Reel
Sold per
Piece
Minimum order
1
Unit weight
0.365 g

Overview

This high-voltage N-channel power MOSFET is part of the MDmesh DM2 fast-recovery diode series. It features ultralow recovery charge (Qrr) and recovery time (trr), combined with low on-resistance RDS(on), making it suitable for demanding high-efficiency converters and ideal for bridge topologies and zero-voltage switching (ZVS) phase-shift converters.

Applications

  • Switching applications

Key features

  • Fast recovery body diode
  • Ultra-low gate charge and input capacitance
  • Low on-resistance
  • 100% avalanche tested
  • Extremely high dv/dt immunity
  • Zener protection

Alternatives

Similar parts — check the datasheet before substituting.

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