Varnitronics
ST

STL8N6LF6AG

55W 60V 32A 27mΩ@10V 1 N-channel N-Channel VDFN-8-Power Single FETs, MOSFETs RoHS

VDFN-8-PowerROHS3 CompliantActive

Automotive-grade N-channel MOSFET, Current:32A, Voltage:60V

Manufacturer
ST
Manufacturer part #
STL8N6LF6AG
Store part #
C2970044
Package / case
VDFN-8-Power
Packaging
Tape & Reel (TR)
Datasheet (PDF)

Every Order Guarantee

100% Authentic · 30-Day Return or Replacement · policy

23 in stock

#C2970044

Stock & price checked 5 days ago

QuantityUnit pricePack price
1+₹423.86₹423.86
10+₹418.05₹4,180.50
30+₹414.19₹12,425.70
100+₹410.33₹41,033.00

1 × ₹423.86

₹423.86

excl. GST

₹500.15 incl. 18% GST

Need volume or a scheduled delivery? Request a quote
  • Dispatch in 15-18 working days
  • GST invoice with every order
  • Standard pack: 3,000 per reel

STL8N6LF6AG

₹423.86 for 1 + GST

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Specifications

Output Capacitance(Coss)
90pF
Ciss-Input Capacitance
1.34nF
Pd - Power Dissipation
55W
Operating Temperature
-55℃~+175℃
Drain to Source Voltage
60V
Current - Continuous Drain(Id)
32A
Reverse Transfer Capacitance (Crss)
60pF
RDS(on)
27mΩ@10V
Number
1 N-channel
Gate Charge(Qg)
27nC@10V
Vgs
±20V
Gate Threshold Voltage (Vgs(th))
2.5V
Type
N-Channel

Packaging & compliance

RoHS
ROHS3 Compliant
Lifecycle
Active
ECCN
EAR99
Packaging
Tape & Reel (TR)
Standard pack
3,000 / Reel
Sold per
Piece
Minimum order
1
Unit weight
0.274 g

Overview

This device is an N-channel power MOSFET developed using STripFET™ F6 technology with a novel trench gate structure. The resulting power MOSFET exhibits extremely low on-state resistance R<sub>DS(on)</sub> across all packages.

Applications

  • Switching applications

Key features

  • Designed specifically for automotive applications, AEC-Q101 compliant
  • Ultra-low on-resistance
  • Ultra-low gate charge
  • High avalanche ruggedness
  • Low gate drive power loss
  • Solderable side-wettable package

Alternatives

Similar parts — check the datasheet before substituting.

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