MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
From
₹2.32
26,12,850 in stock
HXY MOSFETDatasheet (PDF)
STP26N65DM2-HXY
800V 20A 83W 165mΩ@18V 1 N-channel N-Channel TO-220C Single FETs, MOSFETs
TO-220CRoHSActive
- Manufacturer
- HXY MOSFET
- Manufacturer part #
- STP26N65DM2-HXY
- Store part #
- C52754709
- Package / case
- TO-220C
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
201 in stock
#C52754709
Stock & price checked 8 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹348.86 | ₹348.86 |
| 10+ | ₹296.60 | ₹2,966.00 |
| 50+ | ₹263.87 | ₹13,193.50 |
| 100+ | ₹230.48 | ₹23,048.00 |
| 500+ | ₹215.31 | ₹1,07,655.00 |
| 1,000+ | ₹208.80 | ₹2,08,800.00 |
1 × ₹348.86
₹348.86
excl. GST
₹411.65 incl. 18% GST
- Dispatch in 7–10 working days
- GST invoice with every order
- Standard pack: 50 per tube
STP26N65DM2-HXY
₹348.86 for 1 + GST
Specifications
- Operating Temperature
- -55℃~+175℃
- Configuration
- Standalone
- Drain to Source Voltage
- 800V
- Output Capacitance(Coss)
- 34pF
- Current - Continuous Drain(Id)
- 20A
- Ciss-Input Capacitance
- 361pF
- Pd - Power Dissipation
- 83W
- Reverse Transfer Capacitance (Crss)
- 3.5pF
- RDS(on)
- 165mΩ@18V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 17.6nC
- Gate Threshold Voltage (Vgs(th))
- 3V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- Moisture sensitivity
- MSL 3 (168 hours)
- Packaging
- Tube-packed
- Standard pack
- 50 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 2.87 g
Same category
