MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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HXY MOSFETDatasheet (PDF)
STP9N65M2-HXY
130W 650V 10A 800mΩ@10V 1 N-channel N-Channel TO-220H Single FETs, MOSFETs
TO-220HRoHSActive
- Manufacturer
- HXY MOSFET
- Manufacturer part #
- STP9N65M2-HXY
- Store part #
- C54582632
- Package / case
- TO-220H
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
23 in stock
#C54582632
Stock & price checked 9 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹149.17 | ₹149.17 |
| 10+ | ₹125.74 | ₹1,257.40 |
| 50+ | ₹112.63 | ₹5,631.50 |
| 100+ | ₹88.13 | ₹8,813.00 |
| 500+ | ₹81.68 | ₹40,840.00 |
| 1,000+ | ₹78.68 | ₹78,680.00 |
1 × ₹149.17
₹149.17
excl. GST
₹176.02 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 50 per tube
STP9N65M2-HXY
₹149.17 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 136pF
- Ciss-Input Capacitance
- 1.57nF
- Pd - Power Dissipation
- 130W
- Operating Temperature
- -55℃~+150℃
- Configuration
- Standalone
- Drain to Source Voltage
- 650V
- Current - Continuous Drain(Id)
- 10A
- Reverse Transfer Capacitance (Crss)
- 10.5pF
- RDS(on)
- 800mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 44nC@10V
- Vgs
- ±30V
- Gate Threshold Voltage (Vgs(th))
- 4V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- Moisture sensitivity
- MSL 3 (168 hours)
- Packaging
- Tube-packed
- Standard pack
- 50 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 3.016 g
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