Varnitronics
STU4N62K3 ST
ST

STU4N62K3

70W 620V 3.8A 2Ω@10V 1 N-channel N-Channel TO-251-3 Single FETs, MOSFETs RoHS

TO-251-3ROHS3 CompliantActive
Manufacturer
ST
Manufacturer part #
STU4N62K3
Store part #
C2970611
Package / case
TO-251-3
Packaging
Tube-packed
Datasheet (PDF)

Every Order Guarantee

100% Authentic · 30-Day Return or Replacement · policy

24 in stock

#C2970611

Stock & price checked 5 days ago

QuantityUnit pricePack price
1+₹325.42₹325.42
10+₹320.48₹3,204.80
30+₹317.47₹9,524.10
100+₹314.25₹31,425.00

1 × ₹325.42

₹325.42

excl. GST

₹384.00 incl. 18% GST

Need volume or a scheduled delivery? Request a quote
  • Dispatch in 15-18 working days
  • GST invoice with every order
  • Standard pack: 75 per tube

STU4N62K3

₹325.42 for 1 + GST

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Specifications

Output Capacitance(Coss)
42pF
Ciss-Input Capacitance
550pF
Pd - Power Dissipation
70W
Drain to Source Voltage
620V
Current - Continuous Drain(Id)
3.8A
Reverse Transfer Capacitance (Crss)
7pF
RDS(on)
2Ω@10V
Number
1 N-channel
Gate Charge(Qg)
22nC@10V
Vgs
±30V
Gate Threshold Voltage (Vgs(th))
4.5V
Type
N-Channel

Packaging & compliance

RoHS
ROHS3 Compliant
Lifecycle
Active
ECCN
EAR99
Packaging
Tube-packed
Standard pack
75 / Tube
Sold per
Piece
Minimum order
1
Unit weight
1.144 g

Overview

These SuperMESH 3™ power MOSFETs are the result of improvements to STMicroelectronics' SuperMESH 3™ technology, combined with a newly optimized vertical structure. These devices feature extremely low on-resistance, excellent dynamic performance, and high avalanche capability, making them suitable for the most demanding applications.

Applications

  • Switching applications

Key features

  • 100% avalanche tested
  • Extremely high dv/dt capability
  • Minimized gate charge
  • Ultra-low intrinsic capacitance
  • Improved diode reverse recovery characteristics
  • Zener protection

Alternatives

Similar parts — check the datasheet before substituting.

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