MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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HXY MOSFETDatasheet (PDF)
STW65N65DM2AG-HXY
650V 55A 208W 58mΩ@20V 1 N-channel N-Channel TO-247 Single FETs, MOSFETs
TO-247RoHSActive
- Manufacturer
- HXY MOSFET
- Manufacturer part #
- STW65N65DM2AG-HXY
- Store part #
- C53134073
- Package / case
- TO-247
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
30 in stock
#C53134073
Stock & price checked 8 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹1,011.38 | ₹1,011.38 |
| 10+ | ₹872.48 | ₹8,724.80 |
| 30+ | ₹787.83 | ₹23,634.90 |
| 90+ | ₹716.91 | ₹64,521.90 |
1 × ₹1,011.38
₹1,011.38
excl. GST
₹1,193.43 incl. 18% GST
- Dispatch in 7–10 working days
- GST invoice with every order
- Standard pack: 30 per tube
STW65N65DM2AG-HXY
₹1,011.38 for 1 + GST
Specifications
- Operating Temperature
- -55℃~+175℃
- Configuration
- Standalone
- Drain to Source Voltage
- 650V
- Current - Continuous Drain(Id)
- 55A
- Output Capacitance(Coss)
- 119pF
- Ciss-Input Capacitance
- 1.41nF
- Pd - Power Dissipation
- 208W
- Reverse Transfer Capacitance (Crss)
- 4pF
- RDS(on)
- 58mΩ@20V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 66.2nC
- Gate Threshold Voltage (Vgs(th))
- 2.7V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- Moisture sensitivity
- MSL 3 (168 hours)
- Packaging
- Tube-packed
- Standard pack
- 30 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 8.487 g
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