MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
From
₹2.32
25,99,250 in stock

1W 100V 500mA 1.5Ω@10V 1 N-channel N-Channel TO-92-3 Single FETs, MOSFETs RoHS
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8 in stock
#C632579
Stock & price checked 26 h ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹417.42 | ₹417.42 |
| 10+ | ₹410.10 | ₹4,101.00 |
| 30+ | ₹405.38 | ₹12,161.40 |
| 100+ | ₹400.43 | ₹40,043.00 |
1 × ₹417.42
₹417.42
excl. GST
₹492.56 incl. 18% GST
TN0610N3-G
₹417.42 for 1 + GST
The TN0610 low-threshold enhancement-mode (normally-off) transistor employs a vertical double-diffused metal-oxide-semiconductor (VDMOS) structure combined with a mature silicon-gate fabrication process. This combination yields a device that offers the power-handling capability of bipolar transistors along with the inherently high input impedance and positive temperature coefficient characteristic of MOS devices. As with all MOS structures, this device is immune to thermal runaway and thermally induced second breakdown. Microchip's vertical DMOS FETs are well suited for a wide range of switching and amplification applications requiring ultra-low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speed.
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Same category
MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
From
₹2.32
25,99,250 in stock