MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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MICROCHIPDatasheet (PDF)
TN2425N8-G
N-Channel 250V 1.5A Surface Mount SOT-89-3
SOT-89-3ROHS3 CompliantActive
MOSFET N-CH 250V 1.5A SOT-89-3
- Manufacturer
- MICROCHIP
- Manufacturer part #
- TN2425N8-G
- Store part #
- C629189
- Package / case
- SOT-89-3
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
26 in stock
#C629189
Stock & price checked 3 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹521.45 | ₹521.45 |
| 10+ | ₹462.55 | ₹4,625.50 |
| 30+ | ₹427.51 | ₹12,825.30 |
| 100+ | ₹392.06 | ₹39,206.00 |
| 500+ | ₹375.72 | ₹1,87,860.00 |
| 1,000+ | ₹368.42 | ₹3,68,420.00 |
1 × ₹521.45
₹521.45
excl. GST
₹615.31 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 2,000 per reel
TN2425N8-G
₹521.45 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 25pF
- Ciss-Input Capacitance
- 200pF
- Pd - Power Dissipation
- 1.6W
- Operating Temperature
- -55℃~+150℃
- Drain to Source Voltage
- 250V
- Current - Continuous Drain(Id)
- 1.5A
- Reverse Transfer Capacitance (Crss)
- 40pF
- RDS(on)
- 3.5Ω@10V
- Number
- 1 N-channel
- Vgs
- ±20V
- Gate Threshold Voltage (Vgs(th))
- 2.5V
- Type
- N-Channel
Packaging & compliance
- RoHS
- ROHS3 Compliant
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tape & Reel (TR)
- Standard pack
- 2,000 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.099 g
Overview
The TN2425 low-threshold Enhancement-mode (normally-off) transistor uses a vertical DMOS structure and a well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown. Microchip’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Applications
- Logic-Level Interfaces (Ideal for TTL and CMOS)
- Solid-State Relays
- Battery-Operated Systems
- Photovoltaic Drives
- Analog Switches
- General Purpose Line Drivers
- Telecommunication Switches
Key features
- Low Threshold
- High Input Impedance
- Low Input Capacitance
- Fast Switching Speeds
- Low On-Resistance
- Free from Secondary Breakdown
- Low Input and Output Leakage
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